0.32% additional power yield benefited from square mono wafer

Competitive high-temperature performance with ameliorated temperature coefficient

Minimized power loss in cell connection

Higher power generation and better performance under shading effect with multi-busbar and half-cell technology

Optimized electrical design lowers hot spot risk and operating current

Minimized risk of microcrack by using industry-leading cutless cell processing technology

Excellent anti-PID resistance by Nitrous Oxide passivation processing technology